Samsung Electronics signs $200 billion AI chip deal with Broadcom

Samsung Electronics said it has signed a strategic memorandum of understanding with Broadcom to collaborate on next-generation artificial intelligence semiconductor infrastructure worth more than $200 billion over the next five years.

Announced at the AI Summit in San Francisco, the agreement aims to combine Samsung's memory, foundry and advanced packaging technologies with Broadcom's custom semiconductor design leadership.

Under the deal, the two companies will pursue cooperation across memory and foundry sectors through 2030. Samsung plans to supply advanced memory solutions, including high-bandwidth memory, to bolster the performance of Broadcom's AI accelerators.

Samsung recently shipped HBM4 products using industry-first 1c DRAM and 4nm base-die technology in February and began supplying HBM4E samples to customers in May.

In the foundry sector, Samsung will apply processes below 2nm to key product lines such as communication semiconductor solutions. The company also intends to support high-performance AI semiconductors through advanced packaging technology based on its 2nm process.

By linking every stage from chip design optimization to mass production, the collaboration seeks to shorten product development cycles while maximizing performance and power efficiency.

Jeon Young-hyun, head of Samsung's Device Solutions division, said tight integration of memory, logic and advanced packaging is critical in the AI era and that expanding cooperation with Broadcom will accelerate future infrastructure development.

Charlie Kawwas, president of Broadcom's Semiconductor Solutions Group, noted that close collaboration across the semiconductor ecosystem is becoming increasingly important as AI infrastructure expands rapidly.